298 research outputs found

    Quantum oscillation of magnetoresistance in tunneling junctions with a nonmagnetic spacer

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    We make a theoretical study of the quantum oscillations of the tunneling magnetoresistance (TMR) as a function of the spacer layer thickness. Such oscillations were recently observed in tunneling junctions with a nonmagnetic metallic spacer at the barrier-electrode interface. It is shown that momentum selection due to the insulating barrier and conduction via quantum well states in the spacer, mediated by diffusive scattering caused by disorder, are essential features required to explain the observed period of oscillation in the TMR ratio and its asymptotic value for thick nonmagnetic spacer.Comment: 4 pages, 5 figures, two column, REVTex4 styl

    Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes

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    For spin-polarized junctions of ferromagnetically contacting multiple conductive paths, such as ferromagnet (FM)/atomic wires/FM and FM/carbon nanotubes/FM junctions, we theoretically investigate spin-dependent transport to elucidate the intrinsic relation between the number of paths and conduction, and to enhance the magnetoresistance (MR) ratio. When many paths are randomly located between the two FMs, electronic wave interference between the FMs appears, and then the MR ratio increases with increasing number of paths. Furthermore, at each number of paths, the MR ratio for carbon nanotubes becomes larger than that for atomic wires, reflecting the characteristic shape of points in contact with the FM.Comment: 7 pages, 3 figures, accepted for publication in Phys. Rev.

    The Nature and Validity of the RKKY limit of exchange coupling in magnetic trilayers

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    The effects on the exchange coupling in magnetic trilayers due to the presence of a spin-independent potential well are investigated. It is shown that within the RKKY theory no bias nor extra periods of oscillation associated with the depth of the well are found, contrary to what has been claimed in recent works. The range of validity of the RKKY theory is also discussed.Comment: 10, RevTe

    Hydrogen trapping by VC precipitates and structural defects in a high strength Fe-Mn-C steel studied by small-angle neutron scattering

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    The trapping of hydrogen by VC precipitates and structural defects in high strength Fe-Mn-C steel was studied by small angle neutron scattering. No interaction between H and V in solid solution has been detected but a significant interaction between H and structural defects introduced by plastic deformation has been measured. This last effect was reversible upon outgassing of the H. Moreover a significant interaction between H and VC precipitates has been measured; 5 ppm wt. of H could be trapped in the precipitates. This is consistent with the homogeneous trapping of H within the precipitates rather than at the precipitate/matrix interface

    Exponential behavior of the interlayer exchange coupling across non-magnetic metallic superlattices

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    It is shown that the coupling between magnetic layers separated by non-magnetic metallic superlattices can decay exponentially as a function of the spacer thickness NN, as opposed to the usual N2N^{-2} decay. This effect is due to the lack of constructive contributions to the coupling from extended states across the spacer. The exponential behavior is obtained by properly choosing the distinct metals and the superlattice unit cell composition.Comment: To appear in Phys. Rev.

    Influence of s-d interfacial scattering on the magnetoresistance of magnetic tunnel junctions

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    We propose the two-band s-d model to describe theoretically a diffuse regime of the spin-dependent electron transport in magnetic tunnel junctions (MTJ's) of the form F/O/F where F's are 3d transition metal ferromagnetic layers and O is the insulating spacer. We aim to explain the strong interface sensitivity of the tunneling properties of MTJ's and investigate the influence of electron scattering at the nonideal interfaces on the degradation of the TMR magnitude. The generalized Kubo formalism and the Green's functions method were used to calculate the conductance of the system. The vertex corrections to the conductivity were found with the use of "ladder" approximation combined with the coherent-potential approximation (CPA) that allowed to consider the case of strong electron scattering. It is shown that the Ward identity is satisfied in the framework of this approximation that provides the necessary condition for a conservation of a tunneling current. Based on the known results of ab-initio calculations of the TMR for ballistic junctions, we assume that exchange split quasi-free s-like electrons with the density of states being greater for the majority spin sub-band give the main contribution to the TMR effect. We show that, due to interfacial inter-band scattering, the TMR can be substantially reduced even down to zero value. This is related to the fact that delocalized quasi-free electrons can scatter into the strongly localized d sub-band with the density of states at the Fermi energy being larger for minority spins compared to majority spins. It is also shown that spin-flip electron scattering on the surface magnons within the interface leads to a further decrease of the TMR at finite temperature.Comment: REVTeX4, 20 pages, 9 figures, 1 table, submitted to Phys.Rev.B; In Version 2 the text is substantially improved, the main results and conclusions left the sam

    Cr cluster characterization in Cu-Cr-Zr alloy after ECAP processing and aging using SANS and HAADF-STEM

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    International audienceThe precipitation of nano-sized Cr clusters was investigated in a commercial Cu-1Cr-0.1Zr (wt.%) alloy processed by Equal-Channel Angular Pressing (ECAP) and subsequent aging at 550 °C for 4 hours using small angle neutron scattering (SANS) measurements and high-angle annular dark-field-scanning transmission electron microscopy (HAADF-STEM). The size and volume fraction of nano-sized Cr clusters were estimated using both techniques. These parameters assessed from SANS (d~3.2 nm, Fv~1.1 %) agreed reasonably with those from HAADF-STEM (d ~2.5 nm, Fv~2.3%). Besides nano-sized Cr clusters, HAADF-STEM technique evidenced the presence of rare cuboid and spheroid sub-micronic Cr particles about 380-620 nm mean size. Both techniques did not evidence the presence of intermetallic CuxZry phases within the aging conditions

    Spin waves in ultrathin ferromagnetic overlayers

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    The influence of a non-magnetic metallic substrate on the spin wave excitations in ultrathin ferromagnetic overlayers is investigated for different crystalline orientations. We show that spin wave dumping in these systems occur due to the tunneling of holes from the substrate into the overlayer, and that the spin wave energies may be considerably affected by the exchange coupling mediated by the substrate.Comment: RevTeX 4, 7 pages, 5 figures; submitted to Phys. Rev.

    Evaluation of effective resistances in pseudo-distance-regular resistor networks

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    In Refs.[1] and [2], calculation of effective resistances on distance-regular networks was investigated, where in the first paper, the calculation was based on the stratification of the network and Stieltjes function associated with the network, whereas in the latter one a recursive formula for effective resistances was given based on the Christoffel-Darboux identity. In this paper, evaluation of effective resistances on more general networks called pseudo-distance-regular networks [21] or QD type networks \cite{obata} is investigated, where we use the stratification of these networks and show that the effective resistances between a given node such as α\alpha and all of the nodes β\beta belonging to the same stratum with respect to α\alpha (Rαβ(m)R_{\alpha\beta^{(m)}}, β\beta belonging to the mm-th stratum with respect to the α\alpha) are the same. Then, based on the spectral techniques, an analytical formula for effective resistances Rαβ(m)R_{\alpha\beta^{(m)}} such that Lαα1=Lββ1L^{-1}_{\alpha\alpha}=L^{-1}_{\beta\beta} (those nodes α\alpha, β\beta of the network such that the network is symmetric with respect to them) is given in terms of the first and second orthogonal polynomials associated with the network, where L1L^{-1} is the pseudo-inverse of the Laplacian of the network. From the fact that in distance-regular networks, Lαα1=Lββ1L^{-1}_{\alpha\alpha}=L^{-1}_{\beta\beta} is satisfied for all nodes α,β\alpha,\beta of the network, the effective resistances Rαβ(m)R_{\alpha\beta^{(m)}} for m=1,2,...,dm=1,2,...,d (dd is diameter of the network which is the same as the number of strata) are calculated directly, by using the given formula.Comment: 30 pages, 7 figure

    Fluctuation Induced Non-Fermi Liquid Behavior near a Quantum Phase Transition in Itinerant Electron Systems

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    The signature for a non-Fermi liquid behavior near a quantum phase transition has been observed in thermal and transport properties of many metallic systems at low temperatures. In the present work we consider specific examples of itinerant ferromagnet as well as antiferromagnet in the limit of vanishing transition temperature. The temperature variation of spin susceptibility, electrical resistivity, specific heat, and NMR relaxation rates at low temperatures is calculated in the limit of infinite exchange enhancement within the frame work of a self consistent spin fluctuation theory. The resulting non-Fermi liquid behavior is due to the presence of the low lying critically damped spin fluctuations in these systems. The theory presented here gives the leading low temperature behavior, as it turns out that the fluctuation correlation term is always smaller than the mean fluctuation field term in three as well as in two space dimensions. A comparison with illustrative experimental results of these properties in some typical systems has been done. Finally we make some remarks on the effect of disorder in these systems.Comment: File RevTex, 7 Figures available on request, Abstract and text modified, To appear in Phys. Rev.
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